View TSP140A_500331.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
TSP058A~TSP320A
AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE
FEATURES
* Protects by limiting voltages and shunting surge currents away from sensitive circuits
1.0(25.4) MIN.
DO-15
.034(.86) .028(.71)
Unit: inch ( mm )
* Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL * Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 * Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life
MECHANICAL DATA
* Case: JEDEC DO-15 molded plastic * Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r MIL-STD-750, Method 2026 * Polarity: Bi-directional * Weight: 0.015 ounce, 0.4 gram
.300(7.6) .230(5.8)
.140(3.6) .104(2.6)
SUMMARY ELECTRICAL CHARACTERISTICS
Rated Repetitive PeakOff-State Voltage Part Number Max. VDRM V TSP058A TSP065A TSP075A TSP090A TSP120A TSP140A TSP160A TSP190A TSP220A TSP275A TSP320A notes NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KW, 1/2 AC cycle DATE : SEP.02.2002 PAGE . 1 58 65 75 90 120 140 160 190 220 275 320 (1,3) Breakover Voltage Max. VBO @ IBO V 77 88 98 130 160 180 220 260 300 350 400 (3,5,6) On-State Voltage Max. VT @ 1A V 5 5 5 5 5 5 5 5 5 5 5 (3) Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Max. I DRM A 5 5 5 5 5 5 5 5 5 5 5 (3) Max. I BO mA 800 800 800 800 800 800 800 800 800 800 800 (3) Min. IH mA 150 150 150 150 150 150 150 150 150 150 150 (2,3) 44 39 37 34 32 29 28 28 27 27 27 (3) Typ. pF 66 64 57 54 48 47 43 40 40 38 38 (3) 16 15 13 12 12 9 9 8 8 8 8 (3) Max. Typ. pF 24 23 20 18 17 16 15 14 14 13 13 (3) Max.
1.0(25.4) MIN.
CO @ 0 Vdc
CO @ 50 Vdc
CAPACITANCE CHARACTERISTICS
F = 1 MHz, Vac = 15 mVrms
Off-State C apacitance CO Part N umber 0 V dc Typ. TSP058A TSP065A TSP075A TSP090A TSP120A TSP140A TSP160A TSP190A TSP220A TSP275A TSP320A 44 39 37 34 32 29 28 28 27 27 27 Max. 66 64 57 54 48 47 43 40 40 38 38 Typ. 40 35 33 30 28 25 25 24 23 23 23 1 V dc Max. 51 49 42 39 33 32 27 25 25 24 24 Typ. 36 31 29 26 24 21 21 20 19 19 19 pF 2 V dc Max. 49 47 40 37 31 30 24 23 23 22 22 Typ. 33 28 26 23 21 18 18 17 16 16 16 5 V dc Max. 44 42 35 32 26 25 20 18 18 17 17 Typ. 16 15 13 12 12 9 9 8 8 8 8 50 V dc Max. 24 23 20 18 17 16 15 14 14 13 13
RATING AND CHARACTERISTIC CURVES
f=1 MHZ v d=15mV RMS AC T J= 25 C 30 60
O
f=1 MHZ
v d=15mV RMS AC
T J= 25 C
O
Capacitance (pF)
40 30 20
Capacitance (pF)
50
25
TSP220SA
V D=0 Volts DC
20
15
V D=50 Volts DC 10 0 50 100 150 200 250 300 350 10
5 0.1
1
10
100
VDRM Typical Capacitance v.s. Rated Repetitive Off-state Voltage
VD Off-state Voltage (V) Typical Capacitance v.s. Off-state Voltage
100
10A, 10/1000 microseconds
TSP220SC
300
10
I D, Off-State Current (mA)
0.1
TSP220SB
I H , Holding Current (mA)
1
250
200
0.01
150
0.001
TSP220SA
0.0001 0
100
25
0
25
50
75
O
100
125
20
40
60
80
100
120
140 150
TJ , Junction Temperature ( C) Typical Holding Current
TJ ( C ) Typical Off-state Current v.s Junction Temperature
O
DATE : SEP.02.2002
PAGE . 2
RATING AND CHARACTERISTIC CURVES
10A, 10/1000 microseconds
-0.1 -1.0
10A, 10/1000 microseconds
Temperature Coefficient (mA/ oC)
-1.0
Temperature Coefficient (mA/ oC)
-25 0 25 50 75
O
-1.5
-1.5
-2.0
-2.0
-2.5
-2.5
-3.0
-3.0
100
125
-3.5 150
200
250
O
300
350
TJ , Junction Temperature ( C) Typical Holding Current Temperature Coefficient
TJ , Junction Temperature ( C) Typical Holding Current Temperature Coefficient
.16
Temperature Coefficient of VDRM , % / oC
0.14
0.12
0.1
0.08
50
100
150
200
o
250
300
350
Rated VDRM at TJ=25 C (V) Temperature Coefficient of VDRM
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified.
(c) Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw DATE : SEP.02.2002 email: sales@panjit.com.tw
PAGE . 3
SELECTION GUIDE
Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: * Ambient operating temperature range * Maximum telephone line operating current (highest battery and shortest copper loop) * Maximum operating voltage: (Maximum DC bias + peak ringing voltage) * Maximum surge current * System voltage damage threshold * Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 3. Select surge current ratings (IPPS and ITSM) those which the application must withstand. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. 8. Independently evaluate and test the suitability and performance of the device in the application
MAXIMUM SURGE RATINGS (TJ = 25 C UNLESS OTHERWISE NOTED)
Rating Symbol Short-Circuit Current Wave Open-Circuit Voltage Wave Value Notes 2/10 s 2/10 s 175 A 8/20 s 1.2/50 s 150 A 10/160 s 10/160 s 100 A Non-Repetitive Peak Pulse Current I PPS 5/310 s 10/700 s 85 A 10/560 s 10/560 s 70 A 10/1000 s 10/1000 s 50 A (1,2,3,4) Non-Repetitive Peak On-State Surge Current I TSM
20A
(1,2,4,5,6)
Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 C. 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated T J . Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0
60% 80% % Ipps 100%
40%
20%
0% To Ta
Tb
Time
T1
DATE : SEP.02.2002
PAGE . 4
MAXIMUM THERMAL RATINGS
Rating Storage Junction Temperature Range Operating Junction Temperature Range Operating Ambient Temperature Range
Notes: PCB board mounted on minimum foot print.
Symbol TSTG TJ Ta
Value -50 to 150 -40 to 150 -40 to 65
Unit
O
C C C
O
O
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. Symbol RJL Value Max. 20
O
Unit C/W
Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering.
ELECTRICAL CHARACTERISTICS (TC = 25C UNLESS OTHERWISE NOTED)
Parameters Repetitive Peak Off-State Current Breakover Current Holding Current1 On-State Voltage
Notes: Specific I H values are available by request.
Test Conditions VD = rated VDRM f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 K , 1/2 AC cycle 10/1000s waveform, ISC = 10A, VOC = 62 V, RL = 400 I T = 1 A, Tw = 300 s, 1 pulse
Symbol I DRM I BO IH VT
Min.
Max. 5 800
Unit A mA mA
150 5
V
DATE : SEP.02.2002
PAGE . 5
+I
IPPS ITSM IT IBO IH
IBR
_
IDRM
V
VT VDRM VBO
+V
VBR
_I
Characteristic VBO I BO IH IT V
T
Symbol Breakover Voltage Breakover Current Holding Current On-state current On-state voltage
Value Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise Instantaneous current flowing at the breakover voltage (VBO) Minimum current required to maintain the device in the on-state Current through the device in the on-state condition Voltage across the device in the on-state condition at a specified current (IT) The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages The maximum (peak) value of current that results from the application of VDRM Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test Rated value of the rate of rise of current that the device can withstand without damage. The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state.
VDRM
Rated Repetitive Peak Off-State Voltage
I DRM
Repetitive Peak Off-State Current
I PPS
Non-Repetitive Peak pulse current
di/dt dv/dt
Critical rate of rise of on-state current Critical Rate of Rise of Off-State Voltage
DATE : SEP.02.2002
PAGE . 6

▲Up To Search▲

Price & Availability of TSP140A

	To Download TSP140A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .